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              ? Semiconductor Components Industries, LLC, 2011 June, 2011 ? Rev. 3 1 Publication Order Number: MMDL770T1/D MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high?efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features ? Extremely Low Minority Carrier Lifetime ? Very Low Capacitance ? 1.0 pF @ 20 V ? Low Reverse Leakage ? 200 nA (max) ? High Reverse Voltage ? 70 V (min) ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board, (Note 1) @TA = 25 °C Derate above 25°C PD 200 1.57 mW mW/°C Thermal Resistance, Junction?to?Ambient RJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR?5 Minimum Pad 1.0 pF SCHOTTKY BARRIER DIODE Device Package Shipping? ORDERING INFORMATION 1 CATHODE 2 ANODE MMDL770T1G SOD?323 (Pb?Free) 3000 / Tape & Reel ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com SOD?323 CASE 477 STYLE 1 5H = Device Code M = Date Code* = Pb?Free Package *Date Code orientation may vary depending upon manufacturing location. MARKING DIAGRAM (Note: Microdot may be in either location) 1 2 5H M |